description package marking and ordering information device marking device device package reel size tape width quantity 8205a ML8205A tssop-8 ?330mm 12mm 3000 units absolute maximum ratings(ta=25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 8 v i d 6 a drain current-continuous@ current-pulsed (note 1) i dm 20 a maximum power dissipation p d 1.5 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristics thermal resistance,junction-to-ambient (note 2) r ja 83 /w electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 20 v zero gate voltage drain current i dss v ds =18v,v gs =0v 1 a gate-body leakage current i gss v gs =8v,v ds =0v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.5 0.65 1.2 v drain-source on-state resistance r ds(on) v gs =4.5v, i d =6.0a 20 25 m ? v gs =2.5v, i d =5.0a 27 40 m ? general features v ds = 20v,i d = 6a r ds(on) < 40m ? @ v gs =2.5v r ds(on) < 25m ? @ v gs =4.5v high power and current handing capability lead free product is acquired surface mount package application battery protection load switch power management markin g and p in assi g nment d1 s1 s1 g1 d2 s2 s2 g2 1 2 3 4 8 7 65 8205a tssop-8 to p view the ML8205A uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a battery protection or in other switching application. schematic diagram g1 d2 g2 s2 d1 s1 1 v1.1 ML8205A shenzhen meilai electronic co.,ltd www.szmeilai.com
forward transconductance g v =5v,i fs ds d =4.5a 10 s dynamic characteristics (note4) input capacitance c 600 pf lss output capacitance c oss 330 pf v =8v,v ds gs =0v, f=1.0mhz reverse transfer capacitance c 140 pf rss switching characteristics (note 4) turn-on delay time t 10 20 ns d(on) turn-on rise time t 11 25 ns r turn-off delay time t d(off) 35 70 ns v =10v,i dd d =1a v =4.5v,r turn-off fall time t f gs gen =6 ? 30 60 ns total gate charge q 10 15 nc g gate-source charge q gs 2.3 nc v =10v,i gate-drain charge q gd ds d =6a, =4.5v v gs 3 nc drain-source diode characteristics diode forward voltage (note 3) v v =0v,i =1.7a 0.72 1.3 v sd gs s diode forward current (note 2) i 1.7 a s notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production testing. 2 v1.1 ML8205A shenzhen meilai electronic co.,ltd www.szmeilai.com
typical electrical and th ermal characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms vgs rgen vin g vdd rl vout s d figure 1:switching test circuit figure 3 power dissipation t j -junction temperature( ) p d power(w) i d - drain current (a t j -junction temperature( ) figure 4 drain current i d - drain current (a) vds drain-source voltage (v) figure 5 output characteristics figure 6 drain-source on-resistance rdson on-resistance(m ) i d - drain current (a) 3 v1.1 ML8205A shenzhen meilai electronic co.,ltd www.szmeilai.com
4 v1.1 figure 8 drain-source on-resistance normalized on-resistance t j -junction temperature( ) vgs gate-source voltage (v) i d - drain current (a) figure 7 transfer characteristics c capacitance (pf) figure 10 capacitance vs vds vds drain-source voltage (v) figure 9 rdson vs vgs rdson on-resistance(m ) vgs gate-source voltage (v) vgs gate-source voltage (v) qg gate charge (nc) figure 11 gate charge figure 12 source- drain diode forward vsd source-drain voltage (v) i s - reverse drain current (a) ML8205A shenzhen meilai electronic co.,ltd www.szmeilai.com
figure 13 safe operation area i d - drain current (a) vds drain-source voltage (v) r(t),normalized effective transient thermal impedance figure 14 normalized maximum transient thermal impedance square wave pluse duration(sec) 5 v1.1 ML8205A shenzhen meilai electronic co.,ltd www.szmeilai.com
tssop-8 package information dimensions in millimeters (unit:mm) notes 1. all dimensions are in millimeters. 2. dimensions are inclusive of plating 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 6 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. 6 v1.1 ML8205A shenzhen meilai electronic co.,ltd www.szmeilai.com
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